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PUMT1

Features: · Low current (max. 100 mA)· Low voltage (max. 40 V)· Reduces number of components and boardspace.Application· General purpose switching and amplification.Specifications Symbol PARAMETER CONDITIONS MIN. MAX. Unit VCBO Collector-base voltage open emitter - ...

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SeekIC No. : 004467168 Detail

PUMT1: Features: · Low current (max. 100 mA)· Low voltage (max. 40 V)· Reduces number of components and boardspace.Application· General purpose switching and amplification.Specifications Symbol P...

PUMT1 Data Sheet

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Part Number:
PUMT1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Low current (max. 100 mA)
· Low voltage (max. 40 V)
· Reduces number of components and boardspace.


Application

· General purpose switching and amplification.


Specifications

Symbol
PARAMETER
 CONDITIONS
MIN.
MAX.
Unit
VCBO
 Collector-base voltage open emitter
-
50
V
VCEO
 Collector-emitter voltage open base
-
50
V
VEBO
 Emitter-base voltage open collector
-
10
V
IC
 collector current (DC)  
-
-100
mA
ICM
 Peak collector current  
-
-200
mA
IBM
 peak base current  
-
-200
mA
PTOT
 total power dissipation TAMB 25 ;note 1
-
200
mW
TSTG
 Storage Temperature  
-65
+150
TJ
 Junction temperature  
-
150
TAMB
 operating ambient temperature  
-65
+150



<td
Symbol
PARAMETER
 CONDITIONS
MIN.



Description

Two independently operating PNP transistors PUMT1 in an SC-88; SOT363 plastic package. NPN complement: PUMX1.


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