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PUMH11

Features: · Transistors with built-in bias resistors R1 and R2 (typ. 10 kW each)· No mutual interference between the transistors· Simplification of circuit design· Reduces number of components and board space.Application· Especially suitable for space reduction in interface and driver circuits· In...

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SeekIC No. : 004467163 Detail

PUMH11: Features: · Transistors with built-in bias resistors R1 and R2 (typ. 10 kW each)· No mutual interference between the transistors· Simplification of circuit design· Reduces number of components and b...

PUMH11 Data Sheet

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Part Number:
PUMH11
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Transistors with built-in bias resistors R1 and R2 (typ. 10 kW each)
· No mutual interference between the transistors
· Simplification of circuit design
· Reduces number of components and board space.


Application

· Especially suitable for space reduction in interface and driver circuits
· Inverter circuit configurations without use of external resistors.


Specifications

Symbol
PARAMETER
 CONDITIONS
MIN.
MAX.
Unit
VCBO
 Collector-base voltage open emitter
-
50
V
VCEO
 Collector-emitter voltage open base
-
50
V
VEBO
 Emitter-base voltage open collector
-
10
V
VI
 input voltage        
positive  
-
+40
V
negative  
-
-10
V
IO
 output current (DC)  
-
100
mA
ICM
 Peak collector current  
-
100
mA
PTOT
 total power dissipation TAMB 25 ;note 1
-
200
mW
TSTG
 Storage Temperature  
-65
+150
TJ
 Junction temperature  
-
150
TAMB
 operating ambient temperature  
-65
+150



Description

NPN resistor-equipped double transistor PUMH11 in an SC-88 plastic package.


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