Features: · Transistors with built-in bias resistor R1 (typ. 4.7 kW)· No mutual interference between the transistors· Simplification of circuit design· Reduces number of components and board space.Application· General purpose switching and amplification· Inverter and interface circuits· Circuit dr...
PUMB3: Features: · Transistors with built-in bias resistor R1 (typ. 4.7 kW)· No mutual interference between the transistors· Simplification of circuit design· Reduces number of components and board space.A...
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Symbol |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
Unit |
VCBO |
Collector-base voltage | open emitter |
- |
-50 |
V |
VCEO |
Collector-emitter voltage | open base |
- |
-50 |
V |
VEBO |
Emitter-base voltage | open collector |
- |
-10 |
V |
VI |
input voltage | ||||
positive |
- |
+10 |
V | ||
negative |
- |
-40 |
V | ||
IO |
output current (DC) |
- |
-100 |
mA | |
ICM |
Peak collector current |
- |
-100 |
mA | |
PTOT |
total power dissipation | TAMB 25 ;note 1 |
- |
200 |
mW |
TSTG |
Storage Temperature |
-65 |
+150 |
||
TJ |
Junction temperature |
- |
150 |
||
TAMB |
operating ambient temperature |
-65 |
+150 |