Features: · Transistors with built-in bias resistors R1 and R2 (typ. 10 kW each)· No mutual interference between the transistors· Simplification of circuit design· Reduces number of components and board space.Application· Especially suitable for space reduction in interface and driver circuits· In...
PUMB11: Features: · Transistors with built-in bias resistors R1 and R2 (typ. 10 kW each)· No mutual interference between the transistors· Simplification of circuit design· Reduces number of components and b...
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Symbol |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
Unit |
VCBO |
Collector-base voltage | open emitter |
- |
-50 |
V |
VCEO |
Collector-emitter voltage | open base |
- |
-50 |
V |
VEBO |
Emitter-base voltage | open collector |
- |
-10 |
V |
VI |
input voltage | ||||
positive |
- |
+10 |
V | ||
negative |
- |
-40 |
V | ||
IO |
output current (DC) |
- |
-100 |
mA | |
ICM |
Peak collector current |
- |
-100 |
mA | |
PTOT |
total power dissipation | TAMB 25 ;note 1 |
- |
200 |
mW |
TSTG |
Storage Temperature |
-65 |
+150 |
||
TJ |
Junction temperature |
- |
150 |
||
TAMB |
operating ambient temperature |
-65 |
+150 |