PU3171

The PU3171 is designed as silicon NPN triple diffused planar type with 3 NPN elements.

Some absolute maximum ratings of PU3171 have been concluded into several points as follow. The first one is about its collector to base voltage which would be 150V. The next one is about its collector to emitter voltage which would be 100V. The next one is about its emitter to base voltage which would be 8V. The next one is about its peak collector current which would be 5A. The next one is about its collector current which would be 3A. The next one is about its power dissipation which would be 15W. The next one is about its junction temperature range which would be 150°C. The next one is about its storage temperature range which would be from -55 to +150°C.

Also there are some electrical characteristics of PU3171 having been concluded into several points as follow. The first one is about its collector cutoff current which would be max 1.0A with condition of Vce=100V and Ie=0. The next one is about its emitter cutoff current which would be max 5mA with condition of Veb=5V and Ic=0. The next one is about its collector to emitter voltage which would be min 10V with condition of Ic=1.5A and Ib=0. The next one is about its DC current gain which would be min 2000 and max 20000 with condition of Vce=2V and Ic=1.5A. The next one is collector to emitter saturation voltage which would be max 2.0V. The next one is about its base to emitter saturation voltage which would be max 1.5V with condition of Ic=1.5A and Ib=1.5mA. The next one is about its transition frequency which would be typ 20MHz with condition of Vce=10V, Ic=0.5A and f=1MHz. That are all the main specifications. And so on. For more information please contact us.