PU3117

The PU3117 is designed as silicon NPN triple diffused planar type.

PU3117 has three features. The first one is it would have high DC current gain. The next one is it would have good linearity of DC current gain. The next one is that it would have 3 NPN elements. That are all the main features.

Some absolute maximum ratings of PU3117 have been concluded into several points as follow. The first one is about its collector to base voltage which would be 80V. The next one is about its collector to emitter voltage which would be 60V. The next one is about its emitter to base voltage which would be 6V. The next one is about its peak collector current which would be 6A. The next one is about its collector current which would be 3A. The next one is about its base current which would be 1A. The next one is about its power dissipation which would be 15W. The next one is about its junction temperature range which would be 150°C. The next one is about its storage temperature range which would be from -55 to +150°C.

Also there are some electrical characteristics of PU3117 having been concluded into several points as follow. The first one is about its collector cutoff current which would be max 100A with condition of Vcb=80V and Ie=0 and would be max 100A with condition of Vce=40V and Ib=0. The next one is about its emitter ctoff current which would be max 100A with condition of Veb=6V and Ic=0. The next one is about its collector to emitter voltage which would be min 60V with condition of Ic=25mA and Ib=0. The next one is about its DC current gain which would be min 500 and max 2500 with condition of Vce=4V and Ic=0.5A. The next one is collector to emitter saturation voltage which would be max 1V. The next one is about its transition frequency which would be typ 50MHz with condition of Vce=12V, Ic=0.2A and f=10MHz. And so on. For more information please contact us.