PU3116

The PU3116 is designed as silicon NPN epitaxial planar type.

It has three features. The first one is it would have high DC current gain and good linearity. The next one is it would have low collector to emitter saturation voltage. The next one is that it would have 3 NPN elements. That are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. The first one is about its collector to base voltage which would be 200V. The next one is about its collector to emitter voltage which would be 150V. The next one is about its emitter to base voltage which would be 6V. The next one is about its peak collector current which would be 3A. The next one is about its collector current which would be 2A. The next one is about its power dissipation which would be 15W. The next one is about its junction temperature range which would be 150°C. The next one is about its storage temperature range which would be from -55 to +150°C.

Also there are some electrical characteristics having been concluded into several points as follow. The first one is about its collector cutoff current which would be max 50A with condition of Vcb=200V and Ie=0. The next one is about its emitter ctoff current which would be max 50A with condition of Veb=4V and Ic=0. The next one is about its collector to base voltage which would be min 150V. The next one is about its collector to emitter voltage which would be min 150V with condition of Ic=5mA and Ib=0. The next one is about its DC current gain which would be min 60 and max 240 with condition of Vce=10V and Ic=150mA. The next one is collector to emitter saturation voltage which would be max 1V. The next one is about its transition frequency which would be typ 20MHz with condition of Vce=10V, Ic=0.5A and f=1MHz. And so on. For more information please contact us.