Features: Optimized for bandwidths 1805 MHz 1880 MHz and 1930 MHz 1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR@28 V, 90 W (C...
PT F 180901: Features: Optimized for bandwidths 1805 MHz 1880 MHz and 1930 MHz 1990 MHz Improved ruggedness Broadband internal matching Full gold metallization Integrated ESD protection: Human Body Model, Cla...
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T h e PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47%
efficiency with 13.5 dB of gain and produces 115 W, P-1dB. This high-gain high-efficiency device is ideal to power your amplifier design. A laterally diffused single-ended GOLDMOS® FET, it incorporates full gold metallization and integrated ESD protection to ensure excellent lifetime and reliability.