Features: • High sensitivity, -18.5dBm typical• Integrated MEMS VOA extends overload beyond +10dBm• Low capacitance high speed InGaAs PIN photodetector• Supports FEC rates up to 10.709Gb/s• Best in class power consumption, only 350mW• Designed to exceed the envi...
PTV10GC: Features: • High sensitivity, -18.5dBm typical• Integrated MEMS VOA extends overload beyond +10dBm• Low capacitance high speed InGaAs PIN photodetector• Supports FEC rates up...
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The table below provides maximum and/or minimum values of critical parameters which will not permanently damage the device, but for which the operating specification may not hold.
Parameter |
Symbol |
Min |
Max |
Unit |
Amplifier bias voltage |
Vcc |
-6 |
0.5 |
V |
Operating temperature [1] |
Top |
-40 |
+85 |
|
Storage temperature [2] |
Tstg |
-40 |
+85 |
|
Optical input [3] |
Pin |
+5 |
dBm | |
PIN bias voltage |
VPD |
0 |
+7.5 |
V |
VOA control voltage [4] |
VATT |
0 |
9 |
V |
Fibre bend radius |
20 |
mm |
The PTV10GC receiver consists of a PIN photodetector, a low-noise preamplifier, a MEMS variable optical attenuator (VOA) and a precision NTC thermistor in a hermetic coplanar package with a connectorized single-mode fiber pigtail.
Differential outputs are provided to improve noise rejection for enhanced sensitivity. It has been optimised for use in 10Gb/s metro or long haul applications, either as a discrete device or within a transponder, using NRZ modulation, with or without FEC, at data rates up to 10.709Gb/s.