Specifications Characteristics Symbol PTMB75B12 Unit Collector-Emitter Voltage VCES 600 V Gate - Emitter Voltage VGES +/ - 20 V Collector current DC IC 100 A 1 ms ICP 200 Collector Power Dissipation PC 400 W Junction temperature Tj -40 to +150 °C Stor...
PTMB100A6: Specifications Characteristics Symbol PTMB75B12 Unit Collector-Emitter Voltage VCES 600 V Gate - Emitter Voltage VGES +/ - 20 V Collector current DC IC 100 A 1 ms ICP ...
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Specifications Item Symbol PTMB100B12C Unit Collector-Emitter Voltage VCES 600 ...
Specifications Characteristics Symbol PTMB75B12 Unit Collector-Emitter Voltage VCES 1...
Specifications Item Symbol PTMB100B12C Unit Collector-Emitter Voltage VCES 1200 ...
Characteristics | Symbol | PTMB75B12 | Unit | |
Collector-Emitter Voltage | VCES | 600 | V | |
Gate - Emitter Voltage | VGES | +/ - 20 | V | |
Collector current | DC | IC | 100 | A |
1 ms | ICP | 200 | ||
Collector Power Dissipation | PC | 400 | W | |
Junction temperature | Tj | -40 to +150 | °C | |
Storage temperature range | Tstg | -40 to +125 | °C | |
Isolation Voltage Terminal to Base AC, 1 min.) | VISO | 2500 | V | |
Mounting Torque | Module Base to Heatsink | FTOR | 2 | N•m |
Bus Bar to Main Terminals | 1.4 |