PTF080601

Features: • Broadband internal matching• Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40%• Typical CW performance - Output power at P1dB = 90 W - Gain = 17 dB - Efficiency = 60%• Integrated ESD protection: Human Body Model, Class 1 (m...

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SeekIC No. : 004466893 Detail

PTF080601: Features: • Broadband internal matching• Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40%• Typical CW performance - Output power at P1dB = 9...

floor Price/Ceiling Price

Part Number:
PTF080601
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Broadband internal matching
• Typical EDGE performance
  - Average output power = 30 W
  - Gain = 18 dB
  - Efficiency = 40%
• Typical CW performance
  - Output power at P1dB = 90 W
  - Gain = 17 dB
  - Efficiency = 60%
• Integrated ESD protection: Human Body
  Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
  60 W (CW) output power



Specifications

Parameter   Symbol Value Unit
Drain-Source Voltage   VDSS 65 Vdc
Gate-Source Voltage   VGS 0.5 to +12 Vdc
Operating Junction Temperature   TJ 200 °C

Total Device Dissipation

Above 25°C derate by

PTF080601A PD

180

1.03

Watts

W/°C

Total Device Dissipation

Above 25°C derate by

PTF080601E PD

195

1.11

Watts

W/°C

Storage Temperature Range   TSTG 40 to +150 °C
Thermal Resistance (TCASE = 70°C, 130 W CW)

PTF080601A

PTF080601E

RqJC

RqJC

0.972

0.897

°C/W

°C/W




Description

The PTF080601 is a 60W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.




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