Features: • Broadband internal matching• Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40%• Typical CW performance - Output power at P1dB = 90 W - Gain = 17 dB - Efficiency = 60%• Integrated ESD protection: Human Body Model, Class 1 (m...
PTF080601: Features: • Broadband internal matching• Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40%• Typical CW performance - Output power at P1dB = 9...
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Slide Potentiometers 15MM LEVER 10KOHMS 100MM TRVL SNG
Parameter | Symbol | Value | Unit | |
Drain-Source Voltage | VDSS | 65 | Vdc | |
Gate-Source Voltage | VGS | 0.5 to +12 | Vdc | |
Operating Junction Temperature | TJ | 200 | °C | |
Total Device Dissipation Above 25°C derate by |
PTF080601A | PD |
180 1.03 |
Watts W/°C |
Total Device Dissipation Above 25°C derate by |
PTF080601E | PD |
195 1.11 |
Watts W/°C |
Storage Temperature Range | TSTG | 40 to +150 | °C | |
Thermal Resistance (TCASE = 70°C, 130 W CW) |
PTF080601A PTF080601E |
RqJC RqJC |
0.972 0.897 |
°C/W °C/W |
The PTF080601 is a 60W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.