Features: • Broadband internal matching• Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40%• Typical CW performance - Output power at P1dB = 60 W - Gain = 17 dB - Efficiency = 60%• Integrated ESD protection: Human Body Model, Class 1 ...
PTF080451: Features: • Broadband internal matching• Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40%• Typical CW performance - Output power at P1dB =...
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Slide Potentiometers 15MM LEVER 10KOHMS 100MM TRVL SNG
Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
65 |
Vdc |
Gate-Source Voltage |
VGS |
0.5 to +12 |
Vdc |
Operating Junction Temperature |
TJ |
200 |
°C |
Total Device Dissipation Above 25°C derate by |
PD |
184 1.05 |
Watts W/°C |
Storage Temperature Range |
TSTG |
40 to +150 |
°C |
Thermal Resistance (TCASE = 70°C, 45 W CW) |
RqJC |
0.95 |
°C/W |
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.