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PTB32005X

Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Multicell geometry gives good balance of dissipated power and low thermal resistance· Localized thick oxide auto-alignment ...

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PTB32005X: Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Multicell geometry give...

PTB32005X Data Sheet

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Part Number:
PTB32005X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Diffused emitter ballasting resistors providing excellent
    current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Multicell geometry gives good balance of dissipated
    power and low thermal resistance
· Localized thick oxide auto-alignment process and gold
    sandwich metallization ensure an optimum temperature
    profile and excellent performance and reliability.


Application

Common-base, class B power amplifiers up to 4.2 GHz.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCES collector-emitter voltage RBE = 0 - 40 V
VCEO collector-emitter voltage open base - 15 V
VEBO emitter-base voltage open collector - 3 V
IC

collector current (DC)

PTB23001X

PTB23003X

PTB23005X

  

-

-

-

0.25

0.5

0.75

A

A

A

Ptot

total power dissipation

PTB23001X

PTB23003X

PTB23005X

Tmb = 75 °C; f > 1

MHz

-

-

-

4.2

7.6

8.7

W

W

W

Tstg storage temperature   -65 +200 °C
Tj junction temperature   - 200 °C
Tsld soldering temperature t  10 s; note 1 - 235 °C



Description

NPN silicon planar epitaxial microwave power transistor PTB32005X in a metal ceramic SOT440A flange package with base connected to the flange.


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