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PTB23006U

Features: · Very high power gain· Diffused emitter ballasting resistors improve ruggedness· Interdigitated emitter-base structure· Gold metallization with barrier layer to prevent electromigration and gold diffusion during life· Multicell geometry improves power sharing and reduces thermal resista...

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PTB23006U: Features: · Very high power gain· Diffused emitter ballasting resistors improve ruggedness· Interdigitated emitter-base structure· Gold metallization with barrier layer to prevent electromigration a...

PTB23006U Data Sheet

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Part Number:
PTB23006U
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Very high power gain
· Diffused emitter ballasting resistors
    improve ruggedness
· Interdigitated emitter-base
    structure
· Gold metallization with barrier layer
    to prevent electromigration and
    gold diffusion during life
· Multicell geometry improves power
    sharing and reduces thermal resistance
· Internal input prematching network.


Application

Intended for use in common-base, class C power amplifiers at frequencies up to 2.3 GHz.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCES collector-emitter voltage RBE = 0 - 40 V
VCEO collector-emitter voltage open base - 15 V
VEBO emitter-base voltage open collector - 3 V
IC collector current   - 0.75 A
Ptot total power dissipation Tmb = 75 °C - 11 W
Tstg storage temperature   -65 +200 °C
Tj junction temperature   - 200 °C
Tsld soldering temperature t £ 10 s; note 1 - 235 °C



Description

NPN silicon planar epitaxial microwave power transistor PTB23006U in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.




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