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Features: 26 Volt, 960 MHz Characteristics - Output Power = 85 Watts - Collector Efficiency = 50% at 85 Watts - IMD = -30 dBc Max at 60 W(PEP) Class AB Characteristics Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter ...

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SeekIC No. : 004466767 Detail

PTB20135: Features: 26 Volt, 960 MHz Characteristics - Output Power = 85 Watts - Collector Efficiency = 50% at 85 Watts - IMD = -30 dBc Max at 60 W(PEP) Class AB Characteristics Gold Metallization Silicon Nit...

PTB20135 Data Sheet

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Part Number:: PTB20135
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/25

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Product Details

Description

Features:

26 Volt, 960 MHz Characteristics
   - Output Power = 85 Watts
   - Collector Efficiency = 50% at 85 Watts
   - IMD = -30 dBc Max at 60 W(PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated

Specifications

Parameter	Symbol	Rating	Unit
Collector-emitter voltage	V_CER	40	V_dc
Collector-Base Voltage	V_CBO	65	V_dc
Emitter-Base Voltage (collector open)	V_EBO	4.0	V_dc
Collector Current (continuous)	I_C	20	A_dc
Total Device Dissipation at Tflange = 25° CAbove 25°C derate by	P_D	159 0.95	Watts W/°C
Storage Temperature Range	T_stg	40 to +150	°C
Thermal Resistance (Tflange = 70° C)	R_qJC	1.06	°C/W

Description

The PTB20135 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85 watts minimum output power, PTB20135 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

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PTB20135

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