Photodetector Transistors PT +- 6 DEG 800nm 2.5-80mA
PT501: Photodetector Transistors PT +- 6 DEG 800nm 2.5-80mA
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Maximum Power Dissipation : | 75 mW | Maximum Dark Current : | 100 nA |
Package / Case : | TO-18 |
` Narrow acceptance (: TYP. ± 6° )
`TO -18 type standard package
` With base terminal : PT510
Parameter | Symbol | PT501 | PT510 | Unit |
Collector-emitter voltage | VCEO | 45 | 35 | V |
Emitter-collector voltage | VECO | 6 | 6 | V |
Collector-base voltage | VCBO | - | 35 | V |
Emitter-base voltage | V EBO | - | 6 | V |
Collector power dissipation | PC | 75 | 75 | mW |
Operating temperature | T opr | - 25 to +125 | - 25 to + 125 | |
Storage temperature | T stg | - 55 to + 150 | - 55 to + 150 | |
*1Soldering temperature | T sol | 260 | 260 |