Features: • ULTRA SMALL FLAT LEAD PACKAGE:4.6 (L) x 2.5 (W) x 2.1 (H) mm• ISOLATION DISTANCE:0.4 mm MIN• HIGH COLLECTOR TO EMITTER VOLTAGE:VCEO = 300 V: PS2932-1VCEO = 350 V: PS2933-1• HIGH ISOLATION VOLTAGEBV = 2500 Vr.m.s.• AVAILABLE ON TAPE AND REEL:PS2932-1-F3, F4...
PS2933-1: Features: • ULTRA SMALL FLAT LEAD PACKAGE:4.6 (L) x 2.5 (W) x 2.1 (H) mm• ISOLATION DISTANCE:0.4 mm MIN• HIGH COLLECTOR TO EMITTER VOLTAGE:VCEO = 300 V: PS2932-1VCEO = 350 V: PS293...
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PARAMETERS |
UNITS |
RATINGS |
Diode | |||
IF |
Forward Current (DC) |
mA |
50 |
∆IF/°C |
Forward Current Derating |
mA/°C |
0.5 |
IF (Peak) |
Peak Forward Current2 |
A |
0.5 |
PD |
Power Dissipation |
mW |
60 |
VR |
Reverse Voltage |
V |
6 |
Transistor | |||
VCEO |
Collector to Emitter Voltage |
V |
300 |
PS2933-1 |
350 | ||
VECO |
Emitter to Collector Voltage |
V |
0.3 |
IC |
Collector Current |
mA |
60 |
∆PC/˚C |
Power Dissipation Derating |
mW/˚C |
120 |
PC |
Power Dissipation |
mW |
1.2 |
Coupled | |||
VISO |
Isolation Voltage3 |
Vr.m.s. |
2500 |
PT |
Total Power Dissipation |
mW |
160 |
TA |
Operating Ambient Temp. |
°C |
-55 to +100 |
TSTG |
Storage Temperature |
°C |
-55 to +150 |
The PS2932-1 and PS2933-1 are optically coupled isolatorscontaining a GaAs light emitting diode and an NPN siliconphototransistor in one package for high density mounting ap-plications. This device is housed in an ultra-small flat-leadpackage which realizes a reduction in mounting area of about30% compared to the PS28xx series.