PS2534-1

Features:

• High collector to emitter voltage (VCEO = 300 V: PS2534-1, -2, -4, PS2534L-1, -2, -4) (VCEO = 350 V: PS2535-1, -2, -4, PS2535L-1, -2, -4)
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High current transfer ratio (CTR = 1 500 % TYP.)
• Ordering number of taping product:PS2534L-1-E3, E4, F3, F4, PS2534L-2-E3, E4
                                                          PS2535L-1-E3, E4, F3, F4, PS2535L-2-E3, E4


Application

• Telephone, Exchange equipment
• FAX/MODEM


Specifications

Parameter		Symbol	Ratings		Unit
			PS2532-1, PS2532L-1	PS2532-2, -4, PS2532L-2, -4
Diode	Reverse Voltage	VR	80		V
	Forward Current (DC)	IF	6		mA
	Power Dissipation Derating	∆PC/°C	1.5	1.2	mW/°C
	Power Dissipation	PD	150	120	mW/ch
	Peak Forward Current*1	IFP	1		A
Transistor	Collector to Emitter Voltage	VCEO	350		V
	Emitter to Collector Voltage	VECO	0.6		V
	Collector Current	IC	150		mA
	Power Dissipation Derating	∆PC/°C	3.0	2.4	mW/°C
	Power Dissipation	PC	300	240	mW/ch
Isolation Voltage*2		BV	5 000 3 750 *3		Vr.m.s.
Operating Ambient Temperature		TA	-55 to +100		°C
Storage Temperature		Tstg	-55 to +150		°C

*1 PW = 100 ms, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output


Description

The PS2534-1, -2, -4, PS2534L-1, -2, -4, PS2535-1, -2, -4 and PS2535L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor.

The PS2534-1, -2, -4 and PS2535-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2534L-1, -2, -4 and PS2535L-1, -2, -4 are lead bending type (Gull-wing) for surface mount.