Features: •High-speed response(0.5m sec.)•Adjustable of detecting distance•Resistible to exterior light because of composed of modulateApplication•Copiers•FacsimilesSpecifications Item Symbol Rating Unit Supply voltage VCC 8.0 V Output v...
PS-R50L: Features: •High-speed response(0.5m sec.)•Adjustable of detecting distance•Resistible to exterior light because of composed of modulateApplication•Copiers•FacsimilesSpe...
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Item |
Symbol |
Rating |
Unit |
Supply voltage |
VCC |
8.0 |
V |
Output voltage * 1 |
VO |
12 |
V |
Low level output current * 2 |
IOL |
30 |
mA |
Output transistor power dissipation |
PO |
30 |
mW |
Operating temp. * 3 * 4 |
Topr . |
-10∼+60 |
|
Storage temp. * 3 * 4 |
Tstg . |
-10∼+60 |
The PS-R50 photo switches are composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC (in which a photodiode,signal processing circuit,constant voltage circuit and modulation circuit are integrated) at the light receiving side.
P S - R 5 0 L : High level output at shielding
PS-R50D : Low level output at shielding