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PPNGZ52F120A

Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof· Hermetically sealed package· Low package inductance· Very low thermal resistance· Reverse polarity available upon request: PPNH(G)Z52F120B· high frequency IGBT, low switching losses· anti-parallel FR...

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SeekIC No. : 004464497 Detail

PPNGZ52F120A: Features: · Rugged polysilicon gate cell structure· high current handling capability, latch-proof· Hermetically sealed package· Low package inductance· Very low thermal resistance· Reverse polarity ...

PPNGZ52F120A Data Sheet

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Part Number:
PPNGZ52F120A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Rugged polysilicon gate cell structure
· high current handling capability, latch-proof
· Hermetically sealed package
· Low package inductance
· Very low thermal resistance
· Reverse polarity available upon request: PPNH(G)Z52F120B
· high frequency IGBT, low switching losses
· anti-parallel FREDiode (PPNHZ52F120A only)


Specifications

DESCRIPTION
SYMBOL
MAX.
UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ 25°C
BVCES
1200
Volts
Collector-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M
BVCGR
1200
Volts
Continuous Gate-to-Emitter Voltage
VGES
+/-20
Volts
Transient Gate-to-Emitter Voltage
VGEM
+/-30
Volts
Continuous Collector Current

IC25
IC90
52
33
Amps
Peak Collector Current (pulse width limited by Tjmax,)  Tj= 25°C
                                                                                      Tj= 90°C
ICM(25)

ICM(90)
104
66
Amps
Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200H,
                                                        RG= 25, Tj= 25°C
EAS
65
mJ
Short circuit current (SOA) , VCE1200V, TJ= 150°C, tsc10s
IC(SC)
260
A
Short circuit (reverse) current (RBSOA) , VCE1200V, TJ= 150°C
IC(SC)RBSOA
66
A
Power Dissipation
PD
300
Watts
Junction Temperature Range
Tj
-55 to +150
°C
Storage Temperature Range
 Tstg
-55 to +150
°C
Continuous Source Current (Body Diode, PPNHZ52F120A only)
IS 
50
Amps
Pulse Source Current (Body Diode, PPNHZ52F120A only)  
ISM
100
Amps
Thermal Resistance, Junction to Case

JC
0.42
°C/W



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