Features: ·High performance IGBT inverter bridge·Integrated gate drive with fault monitoring & protection·System status / troubleshooting LEDs to verify or monitor proper operation·Isolated gate drive power supplies·Low inductance laminated bus·Output current measurement & feedback·Superio...
PP1200D060: Features: ·High performance IGBT inverter bridge·Integrated gate drive with fault monitoring & protection·System status / troubleshooting LEDs to verify or monitor proper operation·Isolated gate...
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General |
Symbol |
|
Units |
IGBT Junction Temperature |
Tj |
-40 to +150 |
°C |
Storage Temperature |
Tstg |
-40 to +125 |
°C |
Operating Temperature |
Top |
-25 to +85 |
°C |
Voltage Applied to DC terminals |
VCC |
400 |
Volts |
Isolation Voltage, AC 1 minute, 60Hz sinusoidal |
Viso |
2500 |
Volts |
IGBT Inverter | |||
Collector Current (TC = 25°C) |
IC |
1200 |
Amperes |
Peak Collector Current (Tj < 150°C) |
ICM |
2400 |
Amperes |
Emitter Current |
IE |
1200 |
Amperes |
Peak Emitter Current |
IEM |
2400 |
Amperes |
Maximum Collector Dissipation (Tj < 150°C) |
Pc |
3120 |
Watts |
Gate Drive Board | |||
Unregulated +24V Power Supply |
|
30 |
Volts |
Regulated +15V Power Supply |
|
18 |
Volts |
PWM Signal Input Voltage |
|
20 |
Volts |
Fault Output Supply Voltage |
|
30 |
Volts |
Fault Output Current |
|
50 |
mA |