POB8UV6414C-75T-S

The POB8UV6414C-75T-S is designed as a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.

POB8UV6414C-75T-S has eight features. The first one is that it would have high density which would be 64MByte. The next one is about its cycle time (CL=3) which would be 7.5ns. The next one is about its cycle time (CL=2) which would be 11.5ns. The next one is that it would have low power which means active 4.9W. The next one is that it would have LVTTL-compatible inputs and outputs. The next one is that it would have seperate power and ground planes to improve noise immunity. The next one is that it would have single power supply of 3.3V ± 0.3V. The next one is about its height which would be 1.250 inches. That are all the main features.

Some absolute maximum ratings of POB8UV6414C-75T-S have been concluded into several points as follow. The first one is about its voltage on any pin relative to Vss which would be from -0.5V to +4.6V. The next one is about its power dissipation which would be 8.0W. The next one is about its operating temperature range which would be from 0 to 70°C. The next one is about its storage temperature range which would be from -55 to +125°C. The next one is about its short circuit output current which would be ±50mA.

And also there are some recommended DC operating conditions about POB8UV6414C-75T-S. The first one is about its supply voltage which would be min 3.0V and typ 3.3V and max 3.6V. The next one is about its Vss which would be 0V. The next one is about its input high voltage which would be min 2.0V and max Vc+0.5V. The next one is about its input low voltage which would be min -0.5V and max 0.8V. And so on. For more information please contact us.