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PN4917

Transistors Bipolar (BJT) PNP Gen Pur SW

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PN4917: Transistors Bipolar (BJT) PNP Gen Pur SW

PN4917 Data Sheet

floor Price/Ceiling Price

US $ .07~.07 / Piece | Get Latest Price
Part Number:
PN4917
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~7500
  • 7500~10000
  • Unit Price
  • $.07
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 100 at 100 uA at 1 V Configuration : Single
Maximum Operating Frequency : 450 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Box    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Packaging : Box
Collector- Emitter Voltage VCEO Max : 30 V
Maximum Operating Frequency : 450 MHz
DC Collector/Base Gain hfe Min : 100 at 100 uA at 1 V


Specifications

Symbol
Parameter
Value
Units
VCEO Collector-Emitter Voltage
30
V
VCBO Collector-Base Voltage
30
V
VEBO Emitter-Base Voltage
5.0
V
Ic Collector Current - Continuous
200
mA
TJ, Tstg Operating and Storage Junction Temperature Range
-55 to +150
°C



Parameters:

Technical/Catalog InformationPN4917
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)30V
Current - Collector (Ic) (Max)200mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic130mV @ 100A, 1mA
Frequency - Transition-
Current - Collector Cutoff (Max)25nA
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names PN4917
PN4917



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