DescriptionThe PN4248 is designed as one kind of PNP silicon AF low noise small signal transistor device that can be use for AF low noise preamplifier applications.The absolute maximum ratings of the PN4248 can be summarized as:(1)collector-base voltage: 40 V;(2)collector-emitter voltage: 40 V;(3)...
PN4248: DescriptionThe PN4248 is designed as one kind of PNP silicon AF low noise small signal transistor device that can be use for AF low noise preamplifier applications.The absolute maximum ratings of th...
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The PN4248 is designed as one kind of PNP silicon AF low noise small signal transistor device that can be use for AF low noise preamplifier applications.The absolute maximum ratings of the PN4248 can be summarized as:(1)collector-base voltage: 40 V;(2)collector-emitter voltage: 40 V;(3)emitter=base voltage: 5 V;(4)collector current: 50 mA;(5)total power dissipation: 300 mW or 200 mW;(6)operating junction and storage temperature: -55 to +125.
The electrical characteristics of this device can be summarized as:(1)collector-base reakdown voltage: 40 V;(2)collector-emitter breakdown voltage: 40 V;(3)collector-emitter breakdown voltage: 40 V;(4)emitter-base breakdown voltage: 5 V;(5)collector cutoff current: 10 nA or 3 uA;(6)emitter cutoff current: 20 nA;(7)collector-emitter saturation voltage: 0.25 V;(8)base-emitter saturation voltage: 0.9 V. If you want to know more information about the PN4248, please download the datasheet in www.seekic.com or www.chinaicmart.com .