Transistors Bipolar (BJT) NPN Transistor General Purpose
PN3568: Transistors Bipolar (BJT) NPN Transistor General Purpose
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V | ||
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 1 A | ||
DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92 | Packaging : | Bulk |
The PN3568 is designed as one kind of NPN silicon planar epitaxial transistor device that can be use for amplifier and switching applications.The absolute maximum ratings of the PN3568 can be summarized as:(1)collector-base voltage: 80.0 V;(2)collector-emitter voltage: 60.0 V;(3)emitter=base voltage: 5.0 V;(4)collector current: 500 mA;(5)total power dissipation: 600 mW;(6)operating junction and storage temperature: -55 to +150.
The electrical characteristics of this device can be summarized as:(1)collector-base beakdown voltage: 80.0 V;(2)collector-emitter breakdown voltage: 60.0 V;(3)emitter-base breakdown voltage: 5.0 V;(4)collector cutoff current: 50 nA;(5)collector-emitter saturation voltage: 0.25 V;(6)output capacitance: 20 pF;(7)current gain-bandwidth product: 60 to 600 MHz. If you want to know more information about the PN3568, please download the datasheet in www.seekic.com or www.chinaicmart.com .
Technical/Catalog Information | PN3568 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 1A |
Power - Max | 625mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 15mA, 150mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92 |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PN3568 PN3568 |