PN3567

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 40 V
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum DC Collector Current : 0.6 A


Description

The PN3567 is designed as one kind of NPN silicon planar epitaxial transistor device that can be use for amplifier and switching applications.The absolute maximum ratings of the PN3567 can be summarized as:(1)collector-base voltage: 80.0 V;(2)collector-emitter voltage: 60.0 V;(3)emitter=base voltage: 5.0 V;(4)collector current: 500 mA;(5)total power dissipation: 600 mW;(6)operating junction and storage temperature: -55 to +150.

The electrical characteristics of this device can be summarized as:(1)collector-base beakdown voltage: 80.0 V;(2)collector-emitter breakdown voltage: 40.0 V;(3)emitter-base breakdown voltage: 5.0 V;(4)collector cutoff current: 50 nA;(5)collector-emitter saturation voltage: 0.25 V;(6)output capacitance: 20 pF;(7)current gain-bandwidth product: 60 to 600 MHz. If you want to know more information about the PN3567, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	PN3567
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	600mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 1V
Vce Saturation (Max) @ Ib, Ic	250mV @ 15mA, 150mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PN3567 PN3567