PN3565(D27Z)

The PN3565(D27Z) is designed as one kind of NPN silicon planar epitaxial transistor device that can be use for amplifier and switching applications.The absolute maximum ratings of the PN3565(D27Z) can be summarized as:(1)collector-base voltage: 25.0 V;(2)collector-emitter voltage: 30.0 V;(3)emitter=base voltage: 6.0 V;(4)collector current: 50 mA;(5)total power dissipation: 300 mW;(6)operating junction and storage temperature: -55 to +150.

The electrical characteristics of this device can be summarized as:(1)collector-base beakdown voltage: 25.0 V;(2)collector-emitter breakdown voltage: 30.0 V;(3)emitter-base breakdown voltage: 6.0 V;(4)collector cutoff current: 50 nA;(5)collector-emitter saturation voltage: 0.35 V;(6)output capacitance: 4 pF;(7)current gain-bandwidth product: 40 MHz. If you want to know more information about the PN3565(D27Z), please download the datasheet in www.seekic.com or www.chinaicmart.com .