PN100

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 45 V
Maximum Operating Frequency : 250 MHz
Maximum DC Collector Current : 0.5 A
Packaging : Bulk


Features:

·This device is designed for general purpose amplifier applications at collector currents to 300mA.
·Sourced from process 10.


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	45	V
VCBO	Collector-Base Voltage	75	V
VEBO	Emitter-Base Voltage	6.0	V
IC	Collector current - Continuous	500	mA
TJ, Tstg	Junction and Storage Temperature	-55 ~ +150	°C

Parameters:

Technical/Catalog Information	PN100
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	200mV @ 1mA, 10mA
Frequency - Transition	250MHz
Current - Collector Cutoff (Max)	50nA
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PN100 PN100