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PMV56XN

Features: · TrenchMOS™ technology· Very fast switching· Low threshold voltage· Subminiature surface mount packApplication· Battery management·High-speed switch· Low power DC-to-DC converter.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) ...

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SeekIC No. : 004464251 Detail

PMV56XN: Features: · TrenchMOS™ technology· Very fast switching· Low threshold voltage· Subminiature surface mount packApplication· Battery management·High-speed switch· Low power DC-to-DC converter.Sp...

PMV56XN Data Sheet

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Part Number:
PMV56XN
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· TrenchMOS™ technology
· Very fast switching
· Low threshold voltage
· Subminiature surface mount pack


Application

· Battery management
·High-speed switch
· Low power DC-to-DC converter.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage (DC) 25  Tj 150   20 V
VGS gate-source voltage (DC)     ±8 V
ID drain current (DC) Tsp = 25 ; VGS = 4.5 V; Figure 2 and 3   2.5 A
Tsp = 70 ; VGS = 4.5 V; Figure 2   2 A
IDM peak drain current Tsp = 25 ; pulsed; tp 10 ms; Figure 3   10.9 A
Ptot total power dissipation Tsp = 25 ; Figure 1   0.83 W
Tstg storage temperature   -65 +150
Tj junction temperature   -65 +150
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25   0.7 A



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV56XN in SOT23.


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