MOSFET UTRENCHMOS (TM) FET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.55 A | ||
Resistance Drain-Source RDS (on) : | 920 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-416 | Packaging : | Reel |
Technical/Catalog Information | PMR780SN,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 550mA |
Rds On (Max) @ Id, Vgs | 920 mOhm @ 300mA, 10V |
Input Capacitance (Ciss) @ Vds | 23pF @ 30V |
Power - Max | 530mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 1.05nC @ 10V |
Package / Case | EMT3 (SOT-416, SC-75-3) |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT416; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PMR780SN,115 PMR780SN,115 |