PMR370XN,115

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : SOT-416
Resistance Drain-Source RDS (on) : 440 mOhms at 4.5 V
Continuous Drain Current : 0.84 A


Parameters:

Technical/Catalog Information	PMR370XN,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	840mA
Rds On (Max) @ Id, Vgs	440 mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) @ Vds	37pF @ 25V
Power - Max	530mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	0.65nC @ 4.5V
Package / Case	EMT3 (SOT-416, SC-75-3)
FET Feature	Logic Level Gate
Drawing Number	568; SOT416; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PMR370XN,115 PMR370XN,115