MOSFET UTRENCHMOS (TM) FET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | 0.97 A | ||
Resistance Drain-Source RDS (on) : | 350 mOhms at 4.5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-416 | Packaging : | Reel |
Technical/Catalog Information | PMR290XN,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 970mA |
Rds On (Max) @ Id, Vgs | 350 mOhm @ 200mA, 4.5V |
Input Capacitance (Ciss) @ Vds | 34pF @ 20V |
Power - Max | 530mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 0.72nC @ 4.5V |
Package / Case | EMT3 (SOT-416, SC-75-3) |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT416; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PMR290XN,115 PMR290XN,115 |