PMR280UN,115, US $ .06-.08 , NXP Semiconductors, PMR280UN,115 DataSheet download, circuit diagram from SeekIC.com

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PMR280UN,115: MOSFET UTRENCHMOS (TM) FET

PMR280UN,115 Data Sheet

US $ .06~.08 / Piece | Get Latest Price

Part Number:: PMR280UN,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 8 V	Continuous Drain Current :	0.98 A
Resistance Drain-Source RDS (on) :	340 mOhms at 4.5 V	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOT-416	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SOT-416
Continuous Drain Current : 0.98 A
Resistance Drain-Source RDS (on) : 340 mOhms at 4.5 V

Parameters:

Technical/Catalog Information	PMR280UN,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	980mA
Rds On (Max) @ Id, Vgs	340 mOhm @ 200mA, 4.5V
Input Capacitance (Ciss) @ Vds	45pF @ 20V
Power - Max	530mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	0.89nC @ 4.5V
Package / Case	EMT3 (SOT-416, SC-75-3)
FET Feature	Logic Level Gate
Drawing Number	568; SOT416; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PMR280UN,115 PMR280UN,115

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PMR280UN,115

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