PMN55LN

The PMN55LN is designed as one kind of N-channel enhancement mode field-effect transistor device that can be used in DC-to-DC primary side applications. And this device is available in small surface mount package.

The absolute maximum ratings of the PMN55LN can be summarized as:(1)drain-source voltage (DC): 20 V;(2)drain-gate voltage (DC): 20 V;(3)gate-source voltage (DC): ±15 V;(4)drain current (DC): 4.1 A;(5)peak drain current: 16.5 A;(6)total power dissipation: 1.75 W;(7)storage temperature: -55 to +150 °C;(8)junction temperature: -55 to +150 °C;(9)source (diode forward) current (DC): 1.45 A;(10)peak source (diode forward) current: 5.95 A. If you want to know more information such as the electrical characteristics about the PMN55LN, please download the datasheet in www.seekic.com or www.chinaicmart.com.