PMEG6010EP

PinoutDescriptionThe PMEG6010EP is designed as one kind of 1.0 A very low VF MEGA Schottky barrier rectifier device that is encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. And this device can be used in wide range of applications such as:(1)Low voltage re...

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SeekIC No. : 004464146 Detail

PMEG6010EP: PinoutDescriptionThe PMEG6010EP is designed as one kind of 1.0 A very low VF MEGA Schottky barrier rectifier device that is encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) ...

floor Price/Ceiling Price

Part Number:
PMEG6010EP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

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Description

The PMEG6010EP is designed as one kind of 1.0 A very low VF MEGA Schottky barrier rectifier device that is encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. And this device can be used in wide range of applications such as:(1)Low voltage rectification; (2)High efficiency DC-to-DC conversion; (3)Switch Mode Power Supply (SMPS); (4)Reverse polarity protection; (5)Low power consumption; (6)Battery chargers for mobile equipment.

Features of the PMEG6010EP are:(1)Average forward current: IF(AV) </= 1.0 A; (2)Reverse voltage: VR </= 60 V; (3)Low forward voltage; (4)Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity; (5)Leadless small SMD plastic package with medium power capability; (6)AEC-Q101 qualified.

The absolute maximum ratings of the PMEG6010EP can be summarized as:(1)reverse voltage: 60 V;(2)average forward current: 1.0 A;(3)non-repetitive peak forward current: 50.0 A;(4)total power dissipation: 625 mW or 1050 mW or 2100 mW;(5)junction temperature: 150 °C;(6)ambient temperature: -55 to +150 °C;(8)storage temperature: -55 to +150 °C.

The electrical characteristics of PMEG6010EP can be summarized as:(1)forward voltage (IF = 100 mA): 320 to 370 mV;(2)forward voltage (IF = 1 A): 460 to 530 mV;(3)reverse current (VR = 10 V): 1.7 uA;(4)reverse current (VR = 60 V): 30 to 60 uA;(5)diode capacitance: 120 or 40 pF;(6)reverse recovery time: 40 ns. If you want to know more information about the PMEG6010EP, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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