SpecificationsDescriptionThe PMEG3010EB is designed as one kind of 1 A low VF dual MEGA Schottky barrier rectifier device that can be used in wide range of applications such as (1)Low voltage rectification; (2)Reverse polarity protection; (3)High efficiency DC-to-DC conversion; (4)High-speed switc...
PMEG3010EB: SpecificationsDescriptionThe PMEG3010EB is designed as one kind of 1 A low VF dual MEGA Schottky barrier rectifier device that can be used in wide range of applications such as (1)Low voltage rectif...
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Features: · Forward current: 2 A· Reverse voltage: 10 V· Ultra low forward voltage· Very small pla...
Features: · Forward current: £ 2 A· Reverse voltage: £ 10 V· Ultra low forward voltage...
The PMEG3010EB is designed as one kind of 1 A low VF dual MEGA Schottky barrier rectifier device that can be used in wide range of applications such as (1)Low voltage rectification; (2)Reverse polarity protection; (3)High efficiency DC-to-DC conversion; (4)High-speed switching; (5)Switch Mode Power Supply (SMPS); (6)Low power consumption applications.
Features of the PMEG3010EB are:(1)Average forward current: IF(AV) </= 1 A; (2)Reverse voltage: VR </= 30 V; (3)Low forward voltage; (4)AEC-Q101 qualified; (5)Small and flat lead SMD plastic package; (6)High power capability due to clip-bond technology.
The absolute maximum ratings of the PMEG3010EB can be summarized as:(1)reverse voltage: 30 V;(2)repetitive peak forward current: 1.0 A;(3)non-repetitive peak forward current: 3.0 A;(4)total power dissipation: 310 mW; (5)junction temperature: 150 °C;(6)ambient temperature: -55 to +150 °C;(7)storage temperature: -65 to +150 °C. If you want to know more information about PMEG3010EB, please download the datasheet in www.seekic.com or www.chinaicmart.com .