DescriptionThe PMD18K is designed as one kind of silicom NPN/PNP darlington power transistor device PMD18Kthat is manufactured by the eiptaxial-base process, mounted in a hermetically sealed metal package and designed for power switching applications. This device is also designed to be electrical ...
PMD18K: DescriptionThe PMD18K is designed as one kind of silicom NPN/PNP darlington power transistor device PMD18Kthat is manufactured by the eiptaxial-base process, mounted in a hermetically sealed metal p...
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The PMD18K is designed as one kind of silicom NPN/PNP darlington power transistor device PMD18K that is manufactured by the eiptaxial-base process, mounted in a hermetically sealed metal package and designed for power switching applications. This device is also designed to be electrical / mechanical equipments to lambda part numbers.
The absolute maximum ratings of the PMD18K can be summarized as:(1)collector-base voltage: 60 V;(2)collector-emitter voltage: 60 V;(3)emitter-base voltage: 5.0 V;(4)collector current: 30 A;(5)collector current peak: 60 A;(6)base current: 0.75 A;(7)power dissipation: 225 W;(8)operating and storage junction temperature: -65 to +200 . If you want to know more information such as the electrical characteristics about the PMD18K, please download the datasheet in www.seekic.com or www.chinaicmart.com.