DescriptionThe PMD16K is designed as one kind of silicom NPN/PNP darlington power transistor PMD16K device that is manufactured by the eiptaxial-base process, mounted in a hermetically sealed metal package and designed for power switching applications. This device is also designed to be electrical...
PMD16K: DescriptionThe PMD16K is designed as one kind of silicom NPN/PNP darlington power transistor PMD16K device that is manufactured by the eiptaxial-base process, mounted in a hermetically sealed metal ...
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The PMD16K is designed as one kind of silicom NPN/PNP darlington power transistor PMD16K device that is manufactured by the eiptaxial-base process, mounted in a hermetically sealed metal package and designed for power switching applications. This device is also designed to be electrical / mechanical equipments to lambda part numbers.
The absolute maximum ratings of the PMD16K can be summarized as:(1)collector-base voltage: 60 V;(2)collector-emitter voltage: 60 V;(3)emitter-base voltage: 5.0 V;(4)collector current: 20 A;(5)collector current peak: 40 A;(6)base current: 0.5 A;(7)power dissipation: 200 W;(8)operating and storage junction temperature: -65 to +200 . If you want to know more information such as the electrical characteristics about the PMD16K, please download the datasheet in www.seekic.com or www.chinaicmart.com.