PMBFJ111

The PMBFJ111 is designed as one kind of N-channel junction FET device that has some points of features (1)High-speed switching; (2)Interchangeability of drain and source connections; (3)Low RDSon at zero gate voltage ( < 30 W for PMBFJ111). Symmetrical N-channel junction FETs in a surface mount SOT23 envelope. Intended for use in applications such as analog switches, choppers, commutators, multiplexers and thin and thick film hybrids.

The absolute maximum ratings of the PMBFJ111 can be summarized as:(1)drain-source voltage: ±40 V;(2)gate-source voltage: -40 V;(3)drain-drain voltage: -40 V;(4)forward gate current (DC): 50 mA;(5)total power dissipation: 300 mW;(6)storage temperature: -65 to 150 °C;(7)operating junction temperature: 150 °C.

The electrical characteristics of this device can be summarized as:(1)reverse gate current: 1 nA;(2)drain current: 20 mA;(3)gate-source breakdown voltage: 40 V;(4)gate-source cut-off voltage: 3 to 10 V;(5)drain-source on-resistance: 30 . If you want to know more information such as the electrical characteristics about the PMBFJ111, please download the datasheet in www.seekic.com or www.chinaicmart.com.