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PM75CSE060

Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V• Using new Diode which is designed to get soft reverse recovery characteristics.• 3 75A, 600V Current-sense IGBT for 15kHz sw...

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PM75CSE060: Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V• Using new Diode which is desig...

PM75CSE060 Data Sheet

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Part Number:
PM75CSE060
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V
• Using new Diode which is designed to get soft reverse recovery characteristics.
• 3 75A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 5.5/7.5kW class inverter application




Application

General purpose inverter, servo drives and other motor controls




Specifications

Symbol Parameter Conditions Ratings Unit
VCES Collector-emitter voltage VD = 15V, ICIN = 10mA 600 V
±IC Collector current TC = 25°C 75 A
±ICP Collector current (peak) TC = 25°C 150 A
PC Collector dissipation TC = 25°C 255 W
Tj Junction temperature 20 ~ +150 °C





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