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PM50RSE120

Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.b) Using new Diode which is designed to get soft reverse recovery characteristics.• 3 50A, 1200V Current-sense IGBT for 15kHz switching• 15A, 1200V Current-sense rege...

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SeekIC No. : 004463657 Detail

PM50RSE120: Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.b) Using new Diode which is designed to get soft reverse recovery characterist...

PM50RSE120 Data Sheet

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Part Number:
PM50RSE120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
b) Using new Diode which is designed to get soft reverse recovery characteristics.
• 3 50A, 1200V Current-sense IGBT for 15kHz switching
• 15A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 5.5/7.5kW class inverter application




Specifications

Symbol Parameter Conditions Ratings Unit
VCES Collector-emitter voltage VD = 15V, VCIN = 15V 1200 V
±IC Collector current TC = 25°C 50 A
±ICP Collector current (peak) TC = 25°C 100 A
PC Collector dissipation TC = 25°C 328 W
Tj Junction temperature 20 ~ + 150 °C





Description

PM50RSE120 feature

·General purpose inverter, servo drives and other motor controls




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