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PM50CSE120

Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.• Using new Diode which is designed to get soft reverse recovery characteristics.• 3 50A, 1200V Current-sense IGBT for 15kHz switching• Monolithic gate dri...

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SeekIC No. : 004463647 Detail

PM50CSE120: Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.• Using new Diode which is designed to get soft reverse recovery ch...

PM50CSE120 Data Sheet

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Part Number:
PM50CSE120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

• Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.
• Using new Diode which is designed to get soft reverse recovery characteristics.
• 3 50A, 1200V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 5.5/7.5kW class inverter application




Specifications

Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 1200 V
±IC Collector Current TC = 25°C 50 A
±ICP Collector Current (Peak) TC = 25°C 100 A
PC Collector Dissipation TC = 25°C 328 W
Tj Junction Temperature 20 ~ +150 °C





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