Features: · Equipped with Power MOS FET· Low on-resistance· High speed switching· Low drive current· Wide area of safe operation· Inherent parallel diode between source and drain· Isolated base from Terminal· Suitable for motor driver, switching regulator and etc.Application· High Speed Power Swit...
PM5075J: Features: · Equipped with Power MOS FET· Low on-resistance· High speed switching· Low drive current· Wide area of safe operation· Inherent parallel diode between source and drain· Isolated base from...
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· Equipped with Power MOS FET
· Low on-resistance
· High speed switching
· Low drive current
· Wide area of safe operation
· Inherent parallel diode between source and drain
· Isolated base from Terminal
· Suitable for motor driver, switching regulator and etc.
· High Speed Power Switching
Item |
Symbol |
Rating |
Unit |
Drain source voltage |
V(BR)DSS |
500 |
V |
Gate source voltage |
V(BR)GSS |
±30 |
V |
Drain current |
ID |
75 |
A |
Drain peak current |
ID(peak) |
180 |
A |
Body to drain diode reverse drain current |
IDR |
75 |
A |
Body to drain diode reverse peak current |
IDR(peak) |
180 |
A |
Channel dissipation |
Pch*1 |
300 |
W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
45 to +125 |
|
Insulation dielectric |
Viso*2 |
2000 |
Vrms |
Notes:
1. Value at Ta = 25
2. Base to terminals AC minute