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PM200RSE060

Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V• Using new Diode which is designed to get soft reverse recovery characteristics.• 3 200A, 600V Current-sense IGBT for 15kHz s...

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SeekIC No. : 004463559 Detail

PM200RSE060: Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V• Using new Diode which is desig...

PM200RSE060 Data Sheet

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Part Number:
PM200RSE060
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V
• Using new Diode which is designed to get soft reverse recovery characteristics.
• 3 200A, 600V Current-sense IGBT for 15kHz switching
• 75A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 22kW class inverter application




Application

·General purpose inverter, servo drives and other motor controls




Specifications

Symbol Parameter Conditions Ratings Unit
VCES Collector-emitter voltage VD = 15V, ICIN = 10mA 600 V
IC Collector current TC = 25°C 75 A
ICP Collector current (peak) TC = 25°C 150 A
PC Collector dissipation TC = 25°C 312 W
VR(DC) FWDi Rated DC Reverse Voltage TC = 25°C 600 V
IF FWDi Forward Current TC = 25°C 75 A
Tj Junction temperature 20 ~ +150 °C





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