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PM150RSE120

Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.• Using new Diode which is designed to get soft reverse recovery characteristics.• 3 150A, 1200V Current-sense IGBT for 15kHz switching• 50A, 1200V Current-sense ...

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SeekIC No. : 004463544 Detail

PM150RSE120: Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.• Using new Diode which is designed to get soft reverse recovery character...

PM150RSE120 Data Sheet

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Part Number:
PM150RSE120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.
• Using new Diode which is designed to get soft reverse recovery characteristics.
• 3 150A, 1200V Current-sense IGBT for 15kHz switching
• 50A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 30kW class inverter application




Application

• General purpose inverter, servo drives and other motor controls




Specifications

Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 1200 V
±IC Collector Current TC = 25°C 150 A
±ICP Collector Current (Peak) TC = 25°C 300 A
PC Collector Dissipation TC = 25°C 781 W
Tj Junction Temperature 20 ~ +150 °C





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