Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.• Using new Diode which is designed to get soft reverse recovery characteristics.• 3 150A, 1200V Current-sense IGBT for 15kHz switching• 50A, 1200V Current-sense ...
PM150RSE120: Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.• Using new Diode which is designed to get soft reverse recovery character...
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Features: ` Complete Output Power Circuit` Gate Drive Circuit` Protection Logic Short Circuit Over...
Symbol | Parameter | Condition | Ratings | Unit |
VCES | Collector-Emitter Voltage | VD = 15V, VCIN = 15V | 1200 | V |
±IC | Collector Current | TC = 25°C | 150 | A |
±ICP | Collector Current (Peak) | TC = 25°C | 300 | A |
PC | Collector Dissipation | TC = 25°C | 781 | W |
Tj | Junction Temperature | 20 ~ +150 | °C |