PM150RSE120

Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.• Using new Diode which is designed to get soft reverse recovery characteristics.• 3 150A, 1200V Current-sense IGBT for 15kHz switching• 50A, 1200V Current-sense ...

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SeekIC No. : 004463544 Detail

PM150RSE120: Features: • Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.• Using new Diode which is designed to get soft reverse recovery character...

floor Price/Ceiling Price

Part Number:
PM150RSE120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.
Using new Diode which is designed to get soft reverse recovery characteristics.
• 3 150A, 1200V Current-sense IGBT for 15kHz switching
• 50A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 30kW class inverter application





Application

General purpose inverter, servo drives and other motor controls




Specifications

Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 1200 V
±IC Collector Current TC = 25°C 150 A
±ICP Collector Current (Peak) TC = 25°C 300 A
PC Collector Dissipation TC = 25°C 781 W
Tj Junction Temperature 20 ~ +150 °C





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