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PM150CSE120

Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.b) Using new Diode which is designed to get soft reverse recovery characteristics.• 3 150A, 1200V Current-sense IGBT for 15kHz switching• Monolithic gate drive & protect...

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PM150CSE120: Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.b) Using new Diode which is designed to get soft reverse recovery characteristics....

PM150CSE120 Data Sheet

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Part Number:
PM150CSE120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.
b) Using new Diode which is designed to get soft reverse recovery characteristics.

• 3 150A, 1200V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 30kW class inverter application






Application

General purpose inverter, servo drives and other motor controls




Specifications

Symbol
Parameter
Condition
Ratings
Unit
VCES
 Collector-Emitter Voltage VD = 15V, VCIN = 15V
1200
V
±IC
 Collector Current TC=25
100
A
±ICP
 Collector Current (Peak) TC=25
300
A
PC
 Collector Dissipation TC=25
710
W
TJ
 Junction Temperature
20 ~ +150





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