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PM150CSE060

Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process. For example, typical VCE(sat)=1.7Vb) Using new Diode which is designed to get soft reverse recovery characteristics.• 3 150A, 600V Current-sense IGBT for 15kHz switching• M...

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PM150CSE060: Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process. For example, typical VCE(sat)=1.7Vb) Using new Diode which is designed to get soft r...

PM150CSE060 Data Sheet

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Part Number:
PM150CSE060
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process. For example, typical VCE(sat)=1.7V

b) Using new Diode which is designed to get soft reverse recovery characteristics.

• 3 150A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 15/18.5kW class inverter application






Application

General purpose inverter, servo drives and other motor controls




Specifications

Symbol
Parameter
Condition
Ratings
Unit
VCES
 Collector-Emitter Voltage VD = 15V, V CIN = 15V
600
V
±IC
 Collector Current TC=25
150
A
±ICP
 Collector Current (Peak) TC=25
300
A
PC
 Collector Dissipation TC=25
416
W
TJ
 Junction Temperature
20 ~ +125*





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