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PM100RSE120

Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.b) Using new Diode which is designed to get soft reverse recovery characteristics.• 3 100A, 1200V Current-sense IGBT for 15kHz switching• 50A, 1200V Current-sense regenerati...

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PM100RSE120: Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.b) Using new Diode which is designed to get soft reverse recovery characteristics....

PM100RSE120 Data Sheet

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Part Number:
PM100RSE120
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.
b) Using new Diode which is designed to get soft reverse recovery characteristics.

• 3 100A, 1200V Current-sense IGBT for 15kHz switching
• 50A, 1200V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 18.5/22kW class inverter application






Application

General purpose inverter, servo drives and other motor controls




Specifications

Symbol
Parameter
Condition
Ratings
Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V
1200
V
±IC Collector Current TC=25
100
A
±ICP Collector Current (Peak) TC=25
200
A
PC Collector Dissipation TC=25
590
W
TJ Junction Temperature
20 ~ +150





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