PM100RLA060

a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1m fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservationupper and lower arm of IPM.

c) New small package Reduce the package size by 10%, thickness by 22% from S-DASH series.

d) Current rating of brake part increased. 50% for the current rating of inverter part.

• 3 100A, 600V Current-sense IGBT type inverter
• 50A, 600V Current-sense regenerative brake IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices)
• Acoustic noise-less 11kW class inverter application