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PM100CSE120

Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.b) Using new Diode which is designed to get soft reverse recovery characteristics.• 3 100A, 1200V Current-sense IGBT for 15kHz switching• Monolithic gate drive & protect...

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PM100CSE120: Features: a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.b) Using new Diode which is designed to get soft reverse recovery characteristics....

PM100CSE120 Data Sheet

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Part Number:
PM100CSE120
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1m fine rule process.
b) Using new Diode which is designed to get soft reverse recovery characteristics.
• 3 100A, 1200V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature &
under-voltage
• Acoustic noise-less 18.5/22kW class inverter application




Application

General purpose inverter, servo drives and other motor controls




Specifications

Symbol
Parameter
Condition
Ratings
Unit
VCES Collector-Emitter Voltage
VD = 15V, VCIN = 15V
1200
V
±IC Collector Current
TC = 25°C
100
V
±ICP Collector Current (Peak)
TC = 25°C
200
V
PC Collector Dissipation
TC = 25°C
595
W
Tj Junction Temperature
20 ~ +150
°C





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